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Reflective Photosensors (Photo Reflectors)
CNB1009 (ON2173)
Reflective Photosensor
Overview
CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. Fast response : tr, tf = 6 s (typ.) Small size, light weight
9.50.3 6.50.3 4.00.2
Unit : mm
12.00.3 (4.0)
LED
2-o2.3
T.R
1.0
7.40.2 1.0
(1.0) 19.00.3 2-9.50.2
1.0
Features
o2.2
(2.54)
Detection of paper, film and cloth Detection of coin and bill
Optical mark reading
2
Detection of position and edge
1
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25C)
Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector to emitter voltage Output (Photo Emitter to collector voltage transistor) Collector current Collector power dissipation Temperature Operating ambient temperature Storage temperature Symbol Ratings VR IF PD*1 VCEO VECO IC PC*2 Topr 3 50 75 20 5 30 100 -25 to +85 Unit V mA mW V V mA mW C C
(Note) ( ) Dimension is reference
*1
Tstg -30 to +100
Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.34 mW/C at Ta 25C.
Electrical Characteristics (Ta = 25C)
Parameter Input Reverse current (DC) characteristics Capacitance between pins Output characteristics Collector cutoff current Collector to emitter capacitance Transfer characteristics Response time
*1
Symbol VF IR Ct ICEO CC IC*1 IF = 50mA VR = 3V
Conditions
min
Forward voltage (DC)
VR = 0V, f = 1MHz VCE = 10V VCE = 10V, f= 1MHz VCC = 10V, IF = 20mA, RL = 100 100
Collector current
tr*2 , tf*3 VCC = 10V, IC = 1mA, RL = 100
*2
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
Transfer characteristics measurement circuit (Ambient light is shut off completely)
IC VCC
IF
*3
;; ; ;; ;; ;
;; ;;
d = 5 mm
Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector 90% 10% current to decrease from 90% to 10% of its initial value.
tr tf
RL
;;
Standard white paper (Reflective ratio 90%)
Note) The part number in the parenthesis shows conventional part number.
; ;;
3 4 1 23 4 Pin connection
Applications
2.5 min.
(15.5)
typ 1.2 50
max 1.5 10 0.2
Unit V A pF A pF A s
5 500 6 0.3
V
1
Reflective Photosensors (Photo Reflectors)
CNB1009
IF , IC -- Ta
60 60
IF -- V F
1.6 Ta = 25C
VF -- Ta
IF , IC (mA)
50
IF
50
IF (mA)
Forward current, collector current
40 IC
40
VF (V)
1.2
IF = 50mA 10mA
Forward current
Forward voltage
30
30
0.8
1mA
20
20
0.4
10
10
0 - 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Forward voltage VF (V)
Ambient temperature Ta (C )
IC -- I F
10 2 VCC = 5V Ta = 25C RL = 100 10 2
IC -- VCE
160 Ta = 25C
IC -- Ta
VCC = 10V IF = 20mA RL = 100 120
IC (mA)
10
IC (mA)
10
IF = 30mA 1 20mA 10mA
1
Relative output current
10 2
Collector current
Collector current
IC (%)
80
10 -1
10 -1
40
10 -2 10 -1
1
10
10 2
10 -2 10 -1
1
10
0 - 40 - 20
0
20
40
60
80
100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
10 VCE = 10V 10 3
tr -- IC
VCC = 10V Ta = 25C 800
IC -- d
VCC = 10V Ta = 25C RL = 100 IF = 20mA
ICEO (A)
1
10 2
IC (A)
600
tr (s)
Dark current
Rise time
10
-1
Collector current
10
500 100
400
10 -2
1
200
10 -3 - 40 - 20
0
20
40
60
80
100
10 -1 10 -2
10 -1
1
10
0
0
4
Ambient temperature Ta (C )
Collector current IC (mA)
2
; ;
d 8 12 16
RL = 1k
Distance d (mm)
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR

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